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| inchange semiconductor isc product specification isc website www.iscsemi.cn 1 isc silicon pnp power transistor 2N5415 description pnp high-voltage transistor low current (max. 200 ma) high voltage (max. 300 v) applications designed for switching and linear amplification in military, industrial and consumer equipment applications. absolute maximum ratings(t a =25 ) symbol parameter value unit v cbo collector-base voltage 200 v v ceo collector-emitter voltage 200 v v ebo emitter-base voltage 4 v i c collector current-continuous 0.2 a i cm peak collector current 0.4 a i bm peak base ccurrent 0.2 a p c collector power dissipation @ t a <50 1.0 w collector power dissipation @ t c =25 10 t j junction temperature 200 t stg storage temperature range -60~200
inchange semiconductor isc product specification isc website www.iscsemi.cn 2 isc silicon pnp power transistor 2N5415 electrical characteristics t c =25 unless otherwise specified symbol parameter conditions min typ. max unit v ce(sat) collector-emitter sa turation voltage i c = 50ma; i b = 5ma 0.5 v i cbo collector cutoff current v cb = 175v; i e = 0 50 a i ebo emitter cutoff current v eb = 4v; i c = 0 20 a h fe dc current gain i c = 50ma ; v ce = 10v 30 150 f t current-gain?bandwidth product i c = 10ma ; v ce = 10v 15 mhz |
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